Avalanche has more than 225+ patents granted for its non-volatile spin torque transfer magnetic random access memory (STT-MRAM) technology, including perpendicular magnetic tunnel junction (p-MTJ) cell structure, circuit, process and system applications. With disruptive and fundamental IP, Avalanche is delivering an unprecedented combination of high DRAM-like performance and low cost CMOS integration, with excellent scalability to future nodes. This portfolio is creating unique opportunities for highly innovative and cost-efficient system designs in a wide range of applications.

“There are tremendous opportunities for non-volatile memories to replace volatile memories. This will drive major changes in computer architectures and enable entire new types of products for the enterprise, client and consumer industries. Avalanche's extensive patent portfolio and focus on high yield STT-MRAM on 300mm CMOS wafers are factors that should enable the market shift from volatile to non-volatile memory.” – Tom Coughlin, president of Coughlin Associates.