Tornado Discrete MRAM Family

Avalanche’s Tornado discrete MRAM products employ an interface with no write delay. They are designed to meet the growing demand for highly reliable, superior endurance, fast random access, and ultra-low power non-volatile working and program memory.

Discrete MRAM Key Attributes:

  • Byte Addressability – Unlike NOR flash or NAND flash memory which accesses data in pages or blocks, Avalanche MRAM products are byte addressable. This feature greatly reduces system-level design complexity eliminating the need for device drivers, and improves both performance and power.

  • Ultra-Low Power – Unlike SRAM, MRAM cells have no leakage in standby mode, and consume significantly low power in active mode. Avalanche’s energy efficient, SPI MRAM products enable portable consumer devices to achieve longer battery life.

  • Unlimited Endurance – Avalanche’s Perpendicular Spin Transfer Torque MRAM technology enables our MRAM products to achieve, among other attributes, indefinite write endurance. This feature makes Avalanche MRAM products an ideal memory solution for data logging in IoT, consumer, industrial and storage applications.

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