The Next-Generation MRAM Company

Avalanche Technology, headquartered in Fremont, California, is the world leader in Spin Transfer Torque Magnetic RAM (STT-MRAM) non-volatile memory leveraging perpendicular magnetic tunnel junction (pMTJ) cell structure manufactured on 300mm standard CMOS process.

Backed by more than 300+ granted patents around cell, circuit, and system design leveraging MRAM, our technology and products provide breakthrough speeds, unlimited endurance and non-volatility while reducing power and cost. With such attributes, our technology will serve and exceed our customers’ objectives as a replacement for SRAM, eFlash, and ROM in embedded applications in addition to discrete SRAM, non-volatile SRAM, NOR and DRAM.

Industrial

The next generation of compute capable, intelligent IoT nodes will rely on the integration of the high density, reliable, instant access  “Next Generation MRAM” from Avalanche Technology that delivers the needed high performance unified memory architecture.

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Internet of Things

The next generation of compute capable, intelligent IoT nodes will rely on the integration of the “Next Generation MRAM”  from Avalanche Technology that delivers the needed high performance unified memory architecture.

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Aerospace & Defense

Avalanche Technology is developing a large portfolio of highly reliable, radiation hardened “Next Generation MRAM” products based on proprietary pMTJ STT-MRAM technology that are designed to operate successfully in the harsh environment of space.

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Storage

The “Next Generation MRAM” from Avalanche Technology delivers the needed high performance unified memory architecture to remove memory and input-output bottlenecks safely and reliably.

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Get our free Whitepaper on why MRAM is ideal for Industrial Automation & IoT applications

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Get our free Whitepaper on why MRAM has a clear advantage in Aerospace & Defense applications

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