Gen 2 SPnvSRAM Low Energy Family Delivers High-reliability, High-endurance Persistence at Ultra Low Power
FREMONT, California, December 3rd, 2018 – Avalanche Technology, the leader in next generation Perpendicular STT-MRAM technology, today announced a new family of its second generation serial non-volatile memory that offers extreme low power and superior performance, persistence and reliability for mission-critical data capture. This second generation SPnvSRAM family delivers high-speed non-volatility, preventing data-loss even in harsh industrial, consumer operating environments over extreme temperatures. The SPnvSRAM Low Energy series offers 1-Mb to 32-Mb densities at extended-temp industrial-grade specifications. These devices are now available in low pin count, small package options, making them ideal for a broad range of battery-powered, low-energy industrial, consumer, wearable and IoT applications.
The second generation of low energy SPnvSRAM is offered in 20-MHz Serial Peripheral Interface (SPI) as a byte addressable memory, thus eliminating the need for software device drivers. These devices further simplify the software design by not requiring the host controller to issue sleep and wakeup commands as is common with other SPI devices. As a byte addressable memory, there is no delay or buffering, which assures the integrity of the data being written. These devices are offered in Extended Industrial temperature in a variety of small form factor Industry pin compatible RoHS packages. The family is also offered in a wide range of voltages from 1.71V to 3.6V, suitable for today’s industrial IoT designs as well as future generations of low power wearables. MRAM’s inherent immunity to Alpha particles also makes it an ideal solution for devices that are regularly exposed to radiation.
The higher densities (up to 32Mb) in the same small form factor enable customers to simplify designs and eliminate multiple devices that take up valuable board space. As customers’ designs grow, the devices can be simply upgraded to the next density within the same family architecture.
“Avalanche Technology is enabling new categories of products in Industrial IoT, Wearable and Medical designs where Memory Persistence is enabling Machine Learning,” said Petro Estakhri, CEO and co-founder of Avalanche Technology. “High density persistence, combined with an extremely low energy mode, is enabling a unified memory solution for code and data in IoT nodes operating from energy harvesters or battery sources in extremely small form factors.”
The persistence offered by SPnvSRAM is also enabling a new generation of IoT nodes capable of Machine learning where the inference algorithms do not have to be reloaded every time after device wakeup. These IoT nodes with Convolutional and Recurrent Neural Networks are being designed with simple binary weights that trigger coarse inference in real time and can further use the cloud for near human level inference performance based on traditional Stochastic models.
More information about Avalanche technology’s portfolio of MRAM products is available at www.avalanche-technology.com/products/discrete-mram/.
Avalanche’s second-generation SPnvSRAM devices are currently sampling, with production expected in the first quarter of 2019.
About Avalanche Technology
Avalanche Technology Inc. is the leader in next generation Perpendicular STT-MRAM technology, accepted as the front-runner to replace traditional Flash and SRAM for unified memory architectures in future SOC systems, delivering high performance, low power at 55, 40 and 28nm with scalability to 22 and 14nm. With a proven STT-MRAM portfolio at multiple geometry nodes combined with an intellectual property portfolio of more than 280 patents and applications, Avalanche Technology is delivering on the promise of enabling the next generation of scalable embedded unified memory architecture for use in GPUs, MCUs, DSPs, ASSPs and ASICs, making it the true “Next Generation MRAM Company”. For more information, visit us online at www.avalanche-technology.com.
Learn more about our Gen 2 SPnvSRAM memory devices HERE.