Breakthrough, Disruptive NVM Technology First commercially viable non-volatile memory replacement for many embedded and/or stand-alone DRAM and SRAM applications

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Discrete SPMEM for Tier 1 OEMs and AvRAM Embedded Licenses Avalanche's pMTJ-based STT-MRAM addresses market opportunities in Mobile, Industrial, Data Storage, IoT, Wearables and Networking

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STT-MRAM A Powerful Non-Volatile Memory

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Avalanche is in the Forefront More than 225+ patents granted for cell, circuit, process and system applications

Backed by Top-Tier VC's

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Disruptive Technology - The Avalanche Story

Avalanche Technology, headquartered in Fremont, California, is the world leader in Spin Transfer Torque Magnetic RAM (STT-MRAM) non-volatile memory leveraging perpendicular magnetic tunnel junction (pMTJ) cell structure manufactured on 300mm standard CMOS process.

Backed by more than 225+ granted patents around cell, circuit, and system design leveraging MRAM, our technology and products provide breakthrough speeds, unlimited endurance and non-volatility while reducing power and cost. With such attributes, our technology will serve and exceed our customers’ objectives as a replacement for SRAM, eFlash, and ROM in embedded applications in addition to discrete SRAM, non-volatile SRAM, NOR and DRAM.

Avalanche Technology is currently sampling discrete parts up to 64Mbit to its customers and is now poised to ramp the first pMTJ-based MRAM memory in the industry to production in 2016.