Breakthrough, Disruptive NVM Technology First commercially viable non-volatile memory replacement for many embedded and/or stand-alone DRAM and SRAM applications

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Discrete SPMEM for Tier 1 OEMs and AvRAM Embedded Licenses Avalanche's pMTJ-based STT-MRAM addresses market opportunities in Mobile, Industrial, Data Storage, IoT, Wearables and Networking

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STT-MRAM A Powerful Non-Volatile Memory

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Avalanche is in the Forefront More than 185 patents granted for cell, circuit, process and system applications

Backed by Top-Tier VC's

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Disruptive Technology - The Avalanche Story

Avalanche Technology, headquartered in Fremont, California, is the world leader in Spin Transfer Torque Magnetic RAM (STT-MRAM) non-volatile memory leveraging perpendicular magnetic tunnel junction (pMTJ) cell structure manufactured on 300mm standard CMOS process.

Backed by more than 185 granted patents around cell, circuit, and system design leveraging MRAM, our technology and products provide breakthrough speeds, unlimited endurance and non-volatility while reducing power and cost. With such attributes, our technology will serve and exceed our customers’ objectives as a replacement for SRAM, eFlash, and ROM in embedded applications in addition to discrete SRAM, non-volatile SRAM, NOR and DRAM.

Avalanche Technology is currently sampling discrete parts up to 64Mbit to its customers and is now poised to ramp the first pMTJ-based MRAM memory in the industry to production in 2016.