Disruptive Technology - The Avalanche Story
Avalanche Technology, headquartered in Fremont, California, is the world leader in Spin Transfer Torque Magnetic RAM (STT-MRAM) non-volatile memory leveraging perpendicular magnetic tunnel junction (pMTJ) cell structure manufactured on 300mm standard CMOS process.
Backed by more than 225+ granted patents around cell, circuit, and system design leveraging MRAM, our technology and products provide breakthrough speeds, unlimited endurance and non-volatility while reducing power and cost. With such attributes, our technology will serve and exceed our customers’ objectives as a replacement for SRAM, eFlash, and ROM in embedded applications in addition to discrete SRAM, non-volatile SRAM, NOR and DRAM.
Avalanche Technology is currently sampling discrete parts up to 64Mbit to its customers and is now poised to ramp the first pMTJ-based MRAM memory in the industry to production in 2017.