Avalanche Technology Announces Key Patents For STT-MRAM Technology and High Performance Enterprise Solid State Storage
March 25, 2014
Fremont, CA – March 25, 2014 – Avalanche Technology, Inc., a developer of disruptive memory technology and enterprise solid state storage solutions, today announced it has been awarded key ‘milestone' patents for its non-volatile spin torque transfer magnetic random access memory (STT-MRAM) technology and solid-state storage array system design.
These patents bring the Avalanche intellectual property portfolio to more than 200 patents filed of which nearly half of those have been awarded or granted, bolstering Avalanche's vertically integrated ‘sand to systems' technology and product strategy. These highlighted patents cover the full spectrum from memory cell/circuit design and manufacturing to solid-state storage system development and deployment.
"Spin-transfer torque magnetic random access memory (STT-MRAM) with laminated free layer"
– this invention discloses MTJ (magnetic tunnel junction) structures that are extremely applicable to high areal density perpendicular STT-MRAM, and is scalable to well below 10nm, solving the scaling challenges faced by existing technologies today.
"Resistive Memory Device Having Vertical Transistors and Method for Making The Same"
– this is a novel memory cell design that utilizes a surrounding gate vertical access transistor for resistive memory devices, including STT-MRAM. The cell design would allow Avalanche to attain a cell size of 4 F2 for its future memory.
"Method and apparatus for increasing the reliability of an access transistor coupled to a magnetic tunnel junction (MTJ)"
– the Avalanche STT-MRAM products are built using standard CMOS, delivering high-performance non-volatile memory for a wide range of applications at a price point approaching existing DRAM and SRAM solutions.
"Host-managed logical mass storage device using magnetic random access memory"
– enables vertically integrated memory storage arrays built from the ground up, delivering high performance, scalability and low power with a full suite of enterprise features.
"We're leveraging our intellectual property portfolio to disrupt the high performance storage array market," said Petro Estakhri, founder, president and CEO of Avalanche. "We are also establishing a significant footprint to build discrete standalone memory devices as well as enable the licensing of our STT-MRAM technology for embedded applications with leading subsystem and SOC OEM customers worldwide. This broad spectrum of patents preserve our intellectual investment while bringing game changing technology to the marketplace at competitive prices."
Additionally, the company announced new corporate headquarters in Fremont, California, doubling its space to accommodate its quickly growing team, lab and testing requirements.
The new address:
Avalanche Technology, Inc.
46600 Landing Parkway
Fremont, CA 94538
About Avalanche Technology
Avalanche is a disruptive technology company based in Fremont, CA. The company has developed non-volatile STT-MRAM memory technology for vertical integration into the company’s own innovative enterprise solid state storage arrays while enabling key discrete and embedded applications in mobile, storage, computing, networking and telecommunications. Backed by top-tier investors and led by a veteran management team, Avalanche has amassed a distinctive portfolio of more than 200 cell, circuit, process and system patents. By combining its memory components/licensing business with solid-state system arrays, Avalanche is addressing a total market opportunity of more than $75 billion. Twitter: @followavalanche